Silicon N Channel Power MOS FET
Description
RJK0852DPB
80V, 30A, 12m max. Silicon N Channel Power MOS FET Power Switching
Preliminary Datasheet
R07DS0080EJ0200 Rev.2.00
Apr 09, 2013
Features
High speed switching Capable of 4.5 V gate drive Low drive current High density mounting
Low on-resistance
RDS(on) = 9 m typ. (at VGS = 10 V) Pb-free Halogen-free
Outline
RENESAS Package code:...
Similar Datasheet
