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RJK03R4DPA

Renesas Technology
Part Number RJK03R4DPA
Manufacturer Renesas Technology
Description Built in SBD Dual N-channel Power MOS FET
Published Aug 18, 2015
Detailed Description Preliminary Datasheet RJK03R4DPA MOS1 30 V, 20 A, 7.0 mΩ max. MOS2 30 V, 50 A, 2.3 mΩ max. Built in SBD Dual N-channel ...
Datasheet PDF File RJK03R4DPA PDF File

RJK03R4DPA
RJK03R4DPA

Overview
Preliminary Datasheet RJK03R4DPA MOS1 30 V, 20 A, 7.
0 mΩ max.
MOS2 30 V, 50 A, 2.
3 mΩ max.
Built in SBD Dual N-channel Power MOS FET High Speed Power Switching R07DS0888EJ0110 Rev.
1.
10 Oct 29, 2012 Features  Low on-resistance  Capable of 4.
5 V gate drive  High density mounting  Pb-free  Halogen-free Outline RENESAS Package code: PWSN0008DD-B (Package name: WPAK-D(3)) 5 678 1 G1 234 D1 D1 D1 8 G2 4 32 1 MOS1 9 S1/D2 5678 9 S2 S2 S2 56 7 4321 (Bottom View) MOS2 and Schottky Barrier Diode 1, 8 Gate 2, 3, 4, 9 Drain 5, 6, 7, 9 Source Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain curre...


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