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IRFZ46ZPbF

International Rectifier
Part Number IRFZ46ZPbF
Manufacturer International Rectifier
Description Power MOSFET
Published Aug 18, 2015
Detailed Description PD - 95562A IRFZ46ZPbF IRFZ46ZSPbF Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Ra...
Datasheet PDF File IRFZ46ZPbF PDF File

IRFZ46ZPbF
IRFZ46ZPbF

Overview
PD - 95562A IRFZ46ZPbF IRFZ46ZSPbF Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Absolute Maximum Ratings IRFZ46ZLPbF HEXFET® Power MOSFET D VDSS...


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