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RJK0855DPB

Renesas Technology
Part Number RJK0855DPB
Manufacturer Renesas Technology
Description Silicon N-Channel Power MOSFET
Published Aug 20, 2015
Detailed Description RJK0855DPB 80V, 30A, 11 m max. Silicon N Channel Power MOS FET Power Switching Features  High speed switching  Low dr...
Datasheet PDF File RJK0855DPB PDF File

RJK0855DPB
RJK0855DPB

Overview
RJK0855DPB 80V, 30A, 11 m max.
Silicon N Channel Power MOS FET Power Switching Features  High speed switching  Low drive current  Low on-resistance RDS(on) = 8.
2 m typ.
(at VGS = 10 V)  Pb-free  Halogen-free  High density mounting Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 1 234 4 G Preliminary Datasheet R07DS1056EJ0200 (Previous: REJ03G1884-0100) Rev.
2.
00 Apr 11, 2013 5 D SSS 123 1, 2, 3 Source 4 Gate 5 Drain Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation VDSS VGSS ID ID(pulse)Note1 IDR IAP Note 2 EAS Note 2 Pch Note3 Channel to Case Thermal Resistance ch-C Channel temperature Tch Storage temperature Tstg Notes: 1.
PW  10 s, duty cycle  1% 2.
Value at L=10uH, Tch = 25C, Rg  50  3.
Tc = 25C Ratings 80 20 30 120 30 30 12 60 2.
08 150 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W C/W C C R07DS1056EJ0200 Rev.
2.
00 Apr 11, 2013 Page 1 of 6 RJK0855DPB Preliminary Electrical Characteristics Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 4.
Pulse test (Ta = 25°C) Symbol Min Typ Max Unit Test Conditions V(BR)DSS 80 — — V ID = 10 mA, VGS = 0 V IGSS — — 0.
1 A VGS = 20 V, VDS = 0 V IDSS — — 1 A VDS = 80 V, VGS = 0 V VGS(off) 2.
0 — 4.
0 V VDS = 10 V, ID = 1 mA RDS(on) — 8.
2 11 m ID = 15 A, VGS = 10 V Note4 |yfs| — 42 — S ID = 15 A, VDS = 10 V Note4 Ciss — 2550 — pF VDS = 10 V, VGS = 0 V, Coss — 50...


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