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NVD6415AN

ON Semiconductor
Part Number NVD6415AN
Manufacturer ON Semiconductor
Description N-Channel Power MOSFET
Published Aug 22, 2015
Detailed Description NTD6415AN, NVD6415AN N-Channel Power MOSFET 100 V, 23 A, 55 mW Features • Low RDS(on) • High Current Capability • 100% ...
Datasheet PDF File NVD6415AN PDF File

NVD6415AN
NVD6415AN

Overview
NTD6415AN, NVD6415AN N-Channel Power MOSFET 100 V, 23 A, 55 mW Features • Low RDS(on) • High Current Capability • 100% Avalanche Tested • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage − Continuous Continuous Drain Current RqJC Power Dissipation RqJC Steady State Steady State TC = 25°C TC = 100°C TC = 25°C Pulsed Drain Current tp = 10 ms Operating and Storage Temperature Range VDSS VGS ID PD IDM TJ, Tstg 100 ±20 23 16 83 89 −55 to +175 V V A W A °C Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 23 A, L = 0.
3 mH, RG = 25 W) Lead Temperature for Soldering Purposes, 1/8″ from Case for 10 Seconds IS 23 A EAS 79 mJ TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction−to−Case (Drain) Steady State RqJC Junction−to−Ambient (Note 1) RqJA 1.
Surface mounted on FR4 board using 1 sq in pad size, (Cu Area 1.
127 sq in [2 oz] including traces).
1.
8 °C/W 39 http://onsemi.
com V(BR)DSS 100 V RDS(on) MAX 55 mW @ 10 V ID MAX (Note 1) 23 A D N−Channel G S 4 4 12 3 DPAK CASE 369AA STYLE 2 1 2 3 IPAK CASE 369D STYLE 2 MARKING DIAGRAM & PIN ASSIGNMENTS 4 Drain 4 Drain AYWW 64 15ANG AYWW 64 15ANG 1 Gate 2 Drain 3 Source 1 Gate 2 Drain A Y WW 6415AN G = Assembly Location* = Year = Work Week = Device Code = Pb−Free Package 3 Source * The Assembly Location code (A) is front side optional.
In cases where the Assembly Location is stamped in the package, the front side assembly code may...


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