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RJK0853DPB

Part Number	RJK0853DPB
Manufacturer	Renesas Technology
Description	Silicon N Channel Power MOS FET
Published	Aug 23, 2015
Detailed Description	RJK0853DPB 80V, 40A, 8.0m max. Silicon N Channel Power MOS FET Power Switching Preliminary Datasheet R07DS0081EJ0300 R...
Datasheet	RJK0853DPB PDF File

Overview

RJK0853DPB 80V, 40A, 8.
0m max.
Silicon N Channel Power MOS FET Power Switching Preliminary Datasheet R07DS0081EJ0300 Rev.
3.
00 Apr 09, 2013 Features  High speed switching  Capable of 4.
5 V gate drive  Low drive current  High density mounting  Low on-resistance RDS(on) = 6.
2 m typ.
(at VGS = 10 V)  Pb-free  Halogen-free Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 1 234 5 D 4 1, 2, 3 Source G 4 Gate 5 Drain SSS 123 Application  Switching Mode Power Supply Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipatio...

Similar Datasheet

RJK0853DPB Silicon N Channel Power MOS FET - Renesas Technology

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