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NGB8207NT4G

ON Semiconductor
Part Number NGB8207NT4G
Manufacturer ON Semiconductor
Description Ignition IGBT
Published Aug 24, 2015
Detailed Description NGB8207N, NGB8207BN Ignition IGBT 20 A, 365 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGB...
Datasheet PDF File NGB8207NT4G PDF File

NGB8207NT4G
NGB8207NT4G

Overview
NGB8207N, NGB8207BN Ignition IGBT 20 A, 365 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications.
Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required.
Features • Ideal for Coil−on−Plug and Driver−on−Coil Applications • Gate−Emitter ESD Protection • Temperature Compensated Gate−Collector Voltage Clamp Limits Stress Applied to Load • Integrated ESD Diode Protection • Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices • Low Saturation Voltage • ...


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