Silicon N Channel Power MOS FET
Description
RJK1056DPB
100V, 25A, 14m max. Silicon N Channel Power MOS FET Power Switching
Features
High speed switching Low drive current Low on-resistance
RDS(on) = 11 m typ. (at VGS = 10 V) Pb-free Halogen-free High density mounting
Outline
RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK)
5 1 234
4 G
Preliminary Datasheet
R07DS1059EJ0200 (Pre...
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