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IRFSL4020PbF

International Rectifier
Part Number IRFSL4020PbF
Manufacturer International Rectifier
Description Digital Audio MOSFET
Published Aug 24, 2015
Detailed Description PD - 97393 IRFS4020PbF DIGITAL AUDIO MOSFET IRFSL4020PbF Features • Key parameters optimized for Class-D audio amplifie...
Datasheet PDF File IRFSL4020PbF PDF File

IRFSL4020PbF
IRFSL4020PbF

Overview
PD - 97393 IRFS4020PbF DIGITAL AUDIO MOSFET IRFSL4020PbF Features • Key parameters optimized for Class-D audio amplifier applications • Low RDSON for improved efficiency • Low QG and QSW for better THD and improved efficiency • Low QRR for better THD and lower EMI • 175°C operating junction temperature for ruggedness • Can deliver up to 300W per channel into 8Ω load in Key Parameters VDS RDS(ON) typ.
@ 10V Qg typ.
Qsw typ.
200 85 18 6.
7 RG(int) typ.
TJ max 3.
2 175 D D D V mΩ nC nC Ω °C half-bridge configuration amplifier G DS G DS G S D2Pak IRFS4020PbF TO-262 IRFSL4020PbF GDS Gate Drain Source Description This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications.
This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area.
Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI.
Additional features of this MOSFET are 175°C operating junction temperature and repetitive avalanche capability.
These features combine to make this MOSFET a highly efficient, robust and reliable device for ClassD audio amplifier applications.
Absolute Maximum Ratings VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V cContinuous Drain Current, VGS @ 10V Pulsed Drain Current fPower Dissipation fPower Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.
6mm from case) Thermal Resistance Parameter fRθJC Junction-to-Case fRθJA Junction-to-Ambient (PCB Mount) Max.
200 ±20 18 13 52 100 52 0.
70 -55 to + 175 300 Typ.
––– ––– Max.
1.
43 40 Units V A W W/°C °C Units °C/W Notes  through … are on page 2 www.
irf.
com 1 05/14/09 IRFS/SL4020PbF Electrical Characteristics @ T...


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