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IRL3705ZSPbF

International Rectifier
Part Number IRL3705ZSPbF
Manufacturer International Rectifier
Description Power MOSFET
Published Aug 25, 2015
Detailed Description Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Swit...
Datasheet PDF File IRL3705ZSPbF PDF File

IRL3705ZSPbF
IRL3705ZSPbF

Overview
Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
PD - 95579A IRL3705ZPbF IRL3705ZSPbF IRL3705ZLPbF HEXFET® Power MOSFET D VDSS = 55V G RDS(on) = 8.
0mΩ S ID = 75A TO-220AB D2Pak TO-262 IRL3705ZPbF IRL3705ZSPbF IRL3705ZLPbF Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ™ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM P...


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