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IRF3707ZLPbF

International Rectifier
Part Number IRF3707ZLPbF
Manufacturer International Rectifier
Description Power MOSFET
Published Aug 25, 2015
Detailed Description Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free PD - 95333A IRF3707Z...
Datasheet PDF File IRF3707ZLPbF PDF File

IRF3707ZLPbF
IRF3707ZLPbF

Overview
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free PD - 95333A IRF3707ZPbF IRF3707ZSPbF IRF3707ZLPbF HEXFET® Power MOSFET VDSS RDS(on) max Qg :30V 9.
5m 9.
7nC Benefits l Low RDS(on) at 4.
5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current TO-220AB D2Pak TO-262 IRF3707ZPbF IRF3707ZSPbF IRF3707ZLPbF Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C Gate-to-Source Voltage gContinuous Drain Current, VGS @ 10V gContinuous Drain Current, VGS @ 10V ™Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation TJ TSTG Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw Thermal Resistance Parameter RθJC RθCS RθJA RθJA Junction-to-Case eCase-to-Sink, Flat Greased Surface eÃJunction-to-Ambient hJunction-to-Ambient (PCB Mount) Notes  through ‡ are on page 12 www.
irf.
com Max.
30 ± 20 59i 42i 230 57 28 0.
38 -55 to + 175 300 (1.
6mm from case) x x10 lbf in (1.
1 N m) Typ.
––– 0.
50 ––– ––– Max.
2.
653 ––– 62 40 Units V A W W/°C °C Units °C/W 1 05/08/08 IRF3707Z/S/LPbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min.
Typ.
Max.
Units Conditions BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient 30 ––– ––– 0.
023 ––– 7.
5 ––– 10 1.
35 1.
80 ––– -5.
3 ––– ––– 9.
5 12.
5 2.
25 ––– V VGS = 0V, ID = 250µA mV/°C Reference to 25°C, ID = 1mA emΩ VGS = 10V, ID = 21A eVGS = 4.
5V, ID = 17A V VDS = VGS, ID = 25µA mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.
0 µA VDS = 24V, VGS = 0V ––– ––– 150 VDS = 24V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––...


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