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FSGYC260R

Intersil Corporation
Part Number FSGYC260R
Manufacturer Intersil Corporation
Description N-Channel Power MOSFET
Published Mar 23, 2005
Detailed Description FSGYC260R TM Data Sheet May 2000 File Number 4851.1 Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Inter...
Datasheet PDF File FSGYC260R PDF File

FSGYC260R
FSGYC260R

Overview
FSGYC260R TM Data Sheet May 2000 File Number 4851.
1 Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment.
Star*Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems.
Star*Power Gold FETs combine this electrical capability with total dose radiation hardness up to 100K RADs while maintaining the guaranteed performance for SEE (Single Event Effects) which the Intersil FS families have always featured.
TM Features • 56A, 200V, rDS(ON) = 0.
033Ω • UIS Rated • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 82MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 5V Off-Bias • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IAS • Photo Current - 17nA Per-RAD (Si)/s Typically • Neutron - Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2 - Usable to 1E14 Neutrons/cm2 The Intersil family of Star*Power FETs includes a series of devices in various voltage, current and package styles.
The portfolio consists of Star*Power and Star*Power Gold products.
Star*Power FETs are optimized for total dose and rDS(ON) while exhibiting SEE capability at full rated voltage up to an LET of 37.
Star*Power Gold FETS have been optimized for SEE and Gate Charge combining SEE performance to 80% of the rated voltage for an LET of 82 with extremely low gate charge characteristics.
This MOSFET is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure.
It is specifically designed and processed to be radiation tolerant.
The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, power...


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