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FSGYE230R

Intersil Corporation
Part Number FSGYE230R
Manufacturer Intersil Corporation
Description N-Channel Power MOSFET
Published Mar 23, 2005
Detailed Description FSGYE230R TM Data Sheet May 2000 File Number 4853.1 Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Inter...
Datasheet PDF File FSGYE230R PDF File

FSGYE230R
FSGYE230R

Overview
FSGYE230R TM Data Sheet May 2000 File Number 4853.
1 Radiation Hardened, SEGR Resistant N-Channel Power MOSFET Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment.
Star*Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems.
Star*Power Gold FETs combine this electrical capability with total dose radiation hardness up to 100K RADs while maintaining the guaranteed performance for SEE (Single Event Effects) which the Intersil FS families have always featured.
TM Features • 12A, 200V, rDS(ON) = 0.
150Ω • UIS Rated • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 82MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 5V Off-Bias • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically ...


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