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FSJ9055R

Intersil Corporation
Part Number FSJ9055R
Manufacturer Intersil Corporation
Description 55A/ -60V/ 0.029 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
Published Mar 23, 2005
Detailed Description Semiconductor FSJ9055D, FSJ9055R 55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Description Th...
Datasheet PDF File FSJ9055R PDF File

FSJ9055R
FSJ9055R

Overview
Semiconductor FSJ9055D, FSJ9055R 55A, -60V, 0.
029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Description The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments.
The dose rate and neutron tolerance necessary for military applications have not been sacrificed.
The Harris portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure.
It is specially designed and processed to b...


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