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IRF3710ZPbF

International Rectifier
Part Number IRF3710ZPbF
Manufacturer International Rectifier
Description HEXFET Power MOSFET
Published Aug 27, 2015
Detailed Description PD - 95466A Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating T...
Datasheet PDF File IRF3710ZPbF PDF File

IRF3710ZPbF
IRF3710ZPbF

Overview
PD - 95466A Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
IRF3710ZPbF IRF3710ZSPbF IRF3710ZLPbF HEXFET® Power MOSFET D VDSS = 100V RDS(on) = 1...


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