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IRF6626PbF

Part Number	IRF6626PbF
Manufacturer	International Rectifier
Description	DirectFET Power MOSFET
Published	Aug 30, 2015
Detailed Description	PD - 97218 IRF6626PbF IRF6626TRPbF l RoHs Compliant l Lead-Free (Qualified up to 260°C Reflow) l Application Specifi...
Datasheet	IRF6626PbF PDF File

Overview

PD - 97218 IRF6626PbF IRF6626TRPbF l RoHs Compliant l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l High Cdv/dt Immunity l Low Profile (<0.
7mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques DirectFET Power MOSFET Typical values (unless otherwise specified) VDSS VGS RDS(on) RDS(on) 30V max ±20V max 4.
0mΩ@ 10V 5.
2mΩ@ 4.
5V Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) 19nC 6.
7nC 1.
6nC 5.
4nC 13nC 1.
8V ST DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.
7,8 for details) SQ SX ST MQ MX MT Description The IRF6626PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.
7 mm profile.
The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes.
The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6626PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching losses.
The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors operating at higher frequencies.
The IRF6626PbF has been optimized for parameters that are critical in synchronous buck operating from 12 volt buss converters including Rds(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings Parameter VDS Drain-to-Source Voltage VGS ID @ TA = 25°C ID @ TA = 70°C ID @ TC = 25°C IDM EAS IAR Gate-to-Source Voltage e...

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IRF6626PbF DirectFET Power MOSFET - International Rectifier

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