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CEM9935A

Chino-Excel Technology
Part Number CEM9935A
Manufacturer Chino-Excel Technology
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Published Sep 2, 2015
Detailed Description CEM9935A Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6.0A, RDS(ON) = 36mΩ @VGS = 10V. RDS(ON)...
Datasheet PDF File CEM9935A PDF File

CEM9935A
CEM9935A

Overview
CEM9935A Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6.
0A, RDS(ON) = 36mΩ @VGS = 10V.
RDS(ON) = 42mΩ @VGS = 4.
5V.
RDS(ON) = 75mΩ @VGS = 2.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
D1 D1 D2 D2 876 5 5 SO-8 1 123 4 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage VDS 20 VGS ±12 Drain Current-Continuous Drain Current-Pulsed a ID 6.
0 IDM 24 Maximum Power Dissipation PD 2.
0 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 62.
5 Units V V A A W C Units C/W 2003.
July 5 - 233 http://www.
cet-mos.
com CEM9935A Electrical Characteristics TA = 25 C unless otherwise noted Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current On Characteristics c Symbol Test Condition BVDSS IDSS IGSS VGS = 0V, ID = 250µA VDS = 20V, VGS = 0V VGS = 12V, VDS = 0V Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Dynamic Characteristics d VGS(th) RDS(on) gFS VGS = VDS, ID = 250µA VGS = 10V, ID = 6.
0A VGS = 4.
5V, ID = 4.
3A VGS = 2.
5V, ID = 3.
5A VDS = 10V, ID = 4.
3A Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Ciss Coss Crss VDS = 15V, VGS = 0V, f = 1.
0 MHz Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time td(on) tr td(off) VDD = 10V, ID = 1A, VGS = 4.
5V, RGEN = 6Ω Turn-Off Fall Time tf Total Gate Charge Gate-Source Charge Gate-Drain Charge Qg Qgs VDS = 10V, ID = 5.
4A, VGS = 4.
5V Qgd Drain-Source Diode Characteristics and Maximun Ratings Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c IS VSD VGS = 0V, IS = 1.
7A Notes : a.
Repetitive Rating : Pulse width li...


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