DatasheetsPDF.com

WNM2306

Will Semiconductor
Part Number WNM2306
Manufacturer Will Semiconductor
Description N-Channel Power MOSFET
Published Sep 5, 2015
Detailed Description WNM2306 N-Channel, 20V, 3.2A, Power MOSFET WNM2306 Http://www.willsemi.com V(BR)DSS 20 Rds(on) (Max. mŸ) 45 @ 4.5V 55...
Datasheet PDF File WNM2306 PDF File

WNM2306
WNM2306

Overview
WNM2306 N-Channel, 20V, 3.
2A, Power MOSFET WNM2306 Http://www.
willsemi.
com V(BR)DSS 20 Rds(on) (Max.
mŸ) 45 @ 4.
5V 55 @ 2.
5V 66 @ 1.
8V Descriptions The WNM2306 is N-Channel enhancement MOS Field Effect Transistor.
Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
This device is suitable for use in DC-DC conversion and power switch applications.
Standard Product WNM2306 is Pb-free.
Features SOT-23 D 3 12 GS Configuration (Top View) z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold Voltage z Small package SOT-23 WT6* WT6 * = Device Code = Month (A~Z) Marking App...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)