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FSPL230R3

Intersil Corporation
Part Number FSPL230R3
Manufacturer Intersil Corporation
Description Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Published Mar 23, 2005
Detailed Description FSPL230R, FSPL230F TM Data Sheet June 2000 File Number 4865 Radiation Hardened, SEGR Resistant N-Channel Power MOSF...
Datasheet PDF File FSPL230R3 PDF File

FSPL230R3
FSPL230R3

Overview
FSPL230R, FSPL230F TM Data Sheet June 2000 File Number 4865 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment.
Star*Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems.
Star*Power FETs combine this electrical capability with total dose radiation hardness up to 300K RADs while maintaining the guaranteed performance for Single Event Effects (SEE) which the Intersil FS families have always featured.
TM Features • 9A, 200V, rDS(ON) = 0.
170Ω • UIS Rated • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) - Rated to 300K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 100% of Rated Breakdown and VGS of 10V Off-Bias • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IAS • Photo Current - 3.
0nA Per-RAD (Si)/s Typically • Neutron - Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2 - Usable to 1E14 Neutrons/cm2 The Intersil portfolio of Star*Power FETs includes a family of devices in various voltage, current and package styles.
The Star*Power family consists of Star*Power and Star*Power Gold products.
Star*Power FETS are optimized for total dose and rDS(ON) performance while exhibiting SEE capability at full rated voltage up to an LET of 37.
Star*Power Gold FETs have been optimized for SEE and Gate Charge providing SEE performance to 80% of the rated voltage for an LET of 82 with extremely low gate charge characteristics.
This MOSFET is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure.
It is specifically designed and processed to be radiation tolerant.
The MOSFET is well suited for applications exposed to radiation environments suc...


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