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SMMBTA13LT1G

ON Semiconductor
Part Number SMMBTA13LT1G
Manufacturer ON Semiconductor
Description Darlington Amplifier Transistors
Published Sep 11, 2015
Detailed Description MMBTA13L, SMMBTA13L, MMBTA14L, SMMBTA14L Darlington Amplifier Transistors NPN Silicon Features • S Prefix for Automotiv...
Datasheet PDF File SMMBTA13LT1G PDF File

SMMBTA13LT1G
SMMBTA13LT1G

Overview
MMBTA13L, SMMBTA13L, MMBTA14L, SMMBTA14L Darlington Amplifier Transistors NPN Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS VCES VCBO VEBO IC 30 Vdc 30 Vdc 10 Vdc 300 mAdc Characteristic Symbol Max Unit Total Device Dissipation FR− 5 Board (Note 1) TA = 25°C Derate above 25°C PD 225 mW 1.
8 mW/°C Thermal Resistance, Junction−to−Ambient Total Device Dissipation Alumina Substrate, (Note 2) TA = 25°C Derate above 25°C RqJA PD 556 °C/W 300 mW 2.
4 mW/°C Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device.
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