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60R900P

MagnaChip
Part Number 60R900P
Manufacturer MagnaChip
Description MMD60R900P
Published Sep 14, 2015
Detailed Description MMD60R900P Datasheet MMD60R900P 600V 0.9Ω N-channel MOSFET  Description MMD60R900P is power MOSFET using magnachip’s a...
Datasheet PDF File 60R900P PDF File

60R900P
60R900P

Overview
MMD60R900P Datasheet MMD60R900P 600V 0.
9Ω N-channel MOSFET  Description MMD60R900P is power MOSFET using magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge.
It will provide much high efficiency by using optimized charge coupling technology.
These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.
 Key Parameters Parameter VDS @ Tj,max RDS(on),max VTH,typ ID Qg,typ Value 650 0.
9 3 4.
5 12.
3 Unit V Ω V A nC  Package & Internal Circuit D G DS G S  Features  Low Power Loss by High Speed Switching and Low On-Resistance  100% Avalanche Tested  Green Package – Pb Free Plating, Halogen Free  Applications  PFC Power Supply Stages  Switching Applications  Adapter  Motor Control  DC – DC Converters  Ordering Information Order Code Marking MMD60R900PRH 60R900P Temp.
Range -55 ~ 150℃ Package TO-252 (DPAK) Packing Reel & Tube RoHS Status Halogen Free Jul.
2013 Revision 1.
0 1 MagnaChip Semiconductor Ltd.
MMD60R900P Datasheet  Absolute Maximum Rating (Tc=25℃ unless otherwise specified) Parameter Drain – Source voltage Gate – Source voltage Continuous drain current Pulsed drain current(1) Power dissipation Single - pulse avalanche energy MOSFET dv/dt ruggedness Symbol VDSS VGSS ID IDM PD EAS dv/dt Rating 600 ±30 4.
5 2.
7 13.
5 38 46 50 Unit V V A A A W mJ V/ns Note TC=25℃ TC=100℃ Diode dv/dt ruggedness Storage temperature Maximum operating junction temperature 1) Pulse width tP limited by Tj,max 2) ISD ≤ ID, VDS peak ≤ V(BR)DSS dv/dt Tstg Tj 15 -55 ~150 150 V/ns ℃ ℃  Thermal Characteristics Parameter Thermal resistance, junction-case max Thermal resistance, junction-ambient max Symbol Rthjc Rthja Value 3.
25 62.
5 Unit ℃/W ℃/W Jul.
2013 Revision 1.
0 2 MagnaChip Semiconductor Ltd.
MMD60R900P Datasheet  Static Characteristics (Tc=25℃ unless otherwise specified) Parameter Drain – Source Breakdown voltage Gate Threshold Voltage Zero Gate Vol...


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