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TK11S10N1L

Toshiba
Part Number TK11S10N1L
Manufacturer Toshiba
Description Silicon N-channel MOSFET
Published Sep 16, 2015
Detailed Description MOSFETs Silicon N-channel MOS (U-MOS-H) TK11S10N1L 1. Applications • Automotive • Motor Drivers • Switching Voltage Reg...
Datasheet PDF File TK11S10N1L PDF File

TK11S10N1L
TK11S10N1L

Overview
MOSFETs Silicon N-channel MOS (U-MOS-H) TK11S10N1L 1.
Applications • Automotive • Motor Drivers • Switching Voltage Regulators 2.
Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 23 mΩ (typ.
) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (4) Enhancement mode: Vth = 1.
5 to 2.
5 V (VDS = 10 V, ID = 0.
1 mA) 3.
Packaging and Internal Circuit TK11S10N1L DPAK+ 1: Gate 2: Drain (heatsink) 3: Source ©2017-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2015-07 2020-06-24 Rev.
4.
0 TK11S10N1L 4.
Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS 100 V VGSS ±20 Drain current (DC) (Note 1) ID 11 A Drain current (pulsed) Power dissipation (Note 1) IDP (Tc = 25) (Note 2) PD 33 65 W Single-pulse avalanche energy (Note 3) EAS 33.
8 mJ Single-pulse avalanche current IAS 11 A Turn-off dVDS/dt ruggedness dVDS/dt 8.
4 V/ns Channel temperature (Note 4) Tch 175  Storage temperature (Note 4) Tstg -55 to 175 Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
5.
Thermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance Rth(ch-c) 2.
3 /W Note 1: Ensure that the channel temperature does not exceed 175.
Note 2: The power dissipation value is calculated based on the chan...


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