DatasheetsPDF.com

SUD50N025-4m5P

Part Number	SUD50N025-4m5P
Manufacturer	Vishay
Description	N-Channel MOSFET
Published	Sep 21, 2015
Detailed Description	SUD50N025-4m5P Vishay Siliconix N-Channel 25-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 25 0.0045 at VGS = 1...
Datasheet	SUD50N025-4m5P PDF File

Overview

SUD50N025-4m5P Vishay Siliconix N-Channel 25-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 25 0.
0045 at VGS = 10 V 0.
0060 at VGS = 4.
5 V ID (A)a, d 50 50 Qg (Typ.
) 36.
25 nC TO-252 FEATURES • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested APPLICATIONS • DC/DC Conversion, Low-Side - Desktop PC - Server D RoHS COMPLIANT GDS Top View Drain Connected to Tab Ordering Information: SUD50N025-4m5P-E3 (Lead (Pb)-free) G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC = 25 °C Continuous Drain Current (TJ = 175 °C) TC = 70 °C TA = 25 °C ID TA = 70 °C Pulsed Drain Current IDM Avalanche Current Repetitive Avalanche Energy L = 0.
1 mH IAS EAS Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C IS TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C PD TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg Limit 25 ± 20 50a, d 50a, d 18b, c 15b, c 100 28 39 50a, d 2.
1b, c 108a 75.
6a 2.
5b, c 1.
75b, c - 55 to 175 Unit V A V A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, c Maximum Junction-to-Case t ≤ 10 s Steady State Symbol RthJA RthJC Notes: a.
Based on TC = 25 °C.
b.
Surface Mounted on 1" x 1" FR4 board.
c.
t = 10 s.
d.
Calculated based on maximum junction temperature.
Package limitation current is 50 A.
e.
Maximum under Steady State conditions is 90 °C/W.
Typical 48 1.
6 Maximum 60 2 Unit °C/W Document Number: 74951 S-81735-Rev.
B, 04-Aug-08 www.
vishay.
com 1 SUD50N025-4m5P Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA VDS Temperature Coefficient VGS(th) Temperature Coefficient ΔVDS/TJ ΔVGS(th)/TJ ID = 250 µA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Dr...

Similar Datasheet

SUD50N025-4m5P N-Channel MOSFET - Vishay

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)