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CEF85N75

CET
Part Number CEF85N75
Manufacturer CET
Description N-Channel MOSFET
Published Sep 22, 2015
Detailed Description CEP85N75/CEB85N75 CEF85N75 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP85N75 CEB85N75 CEF85N75...
Datasheet PDF File CEF85N75 PDF File

CEF85N75
CEF85N75

Overview
CEP85N75/CEB85N75 CEF85N75 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP85N75 CEB85N75 CEF85N75 VDSS 75V 75V 75V RDS(ON) 12mΩ 12mΩ 12mΩ ID 86A 86A 86A e @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package & TO-220F full-pak for through hole.
D G D GS CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range Tc = 25 C unless otherwise noted Symbol Limit TO-220/263 TO-220F VDS 75 VGS ±30 ID 86 86e IDM f 344 344e 200 75 PD 1.
33 0.
5 EAS IAS TJ,Tstg 880 880 45 45 -55 to 175 Units V V A A W W/ C mJ A C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 0.
75 62.
5 2 65 Units C/W C/W Details are subject to change without notice .
1 Rev 3.
2008.
Sep.
http://www.
cet-mos.
com CEP85N75/CEB85N75 CEF85N75 Electrical Characteristics Tc = 25 C unless otherwise noted Parameter Off Characteristics Symbol Test Condition Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics b BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 75V, VGS = 0V VGS = 30V, VDS = 0V VGS = -30V, VDS = 0V Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics c VGS(th) RDS(on) VGS = VDS, ID = 250µA VGS = 10V, ID = 40A Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics c gFS Ciss Coss Crss VDS = 15V, ID = 40A VDS = 25V, VGS = 0V, f = 1.
0 MHz Turn-On Delay Time ...


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