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CEP830G

Part Number	CEP830G
Manufacturer	CET
Description	N-Channel MOSFET
Published	Sep 22, 2015
Detailed Description	CEP830G/CEB830G CEF830G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP830G CEB830G VDSS 500V 50...
Datasheet	CEP830G PDF File

Overview

CEP830G/CEB830G CEF830G N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP830G CEB830G VDSS 500V 500V CEF830G 500V RDS(ON) 1.
5Ω 1.
5Ω 1.
5Ω ID @VGS 5A 10V 5A 10V 5A e 10V Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D G D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS VGS ID IDM f 500 ±30 5 20 5e 20 e Maximum Power Dissipation @ TC = 25 C - Dera...

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