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CEP75N06G

CET
Part Number CEP75N06G
Manufacturer CET
Description N-Channel MOSFET
Published Sep 22, 2015
Detailed Description CEP75N06G/CEB75N06G N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 75A, RDS(ON) = 13mΩ @VGS = 10V. Su...
Datasheet PDF File CEP75N06G PDF File

CEP75N06G
CEP75N06G

Overview
CEP75N06G/CEB75N06G N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 75A, RDS(ON) = 13mΩ @VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
TO-220 & TO-263 package.
D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d Operating and Store Temperature Range Tc = 25 C unless otherwise noted Symbol Limit VDS 60 VGS ±20 ID 75 53 IDM 300 150 PD 1 EAS IAS TJ,Tstg 360 30 -65 to 175 Units V V A A A W W/ C mJ A C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Limit 1 62.
5 Units C/W C/W Details are subject t...


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