2SD864
Description
INCHANGE Semiconductor
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isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD864
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= 1.5A ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 120V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.5V(Max)@ IC= 1.5A ·Complement to Type 2SB765
APPLICATIO...
Inchange Semiconductor
D864 PDF File
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