Dual MOSFET
Description
CEH2608
Dual Enhancement Mode Field Effect Transistor (N Channel)
PRELIMINARY
FEATURES
20V, 3.8A, RDS(ON) = 50mΩ @VGS = 4.5V. RDS(ON) = 70mΩ @VGS = 2.5V. RDS(ON) = 100mΩ @VGS = 1.8V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
Surface mount Package.
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