Dual Enhancement Mode Field Effect Transistor
Description
CEU3099
Dual Enhancement Mode Field Effect Transistor (N and P Channel)
FEATURES
30V , 26A , RDS(ON) = 10mΩ @VGS = 10V. RDS(ON) = 17mΩ @VGS = 4.5V.
-30V , -19A , RDS(ON) = 20mΩ @VGS = 10V. RDS(ON) = 30mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
G1
High power and current handing capability.
Lead free product is acquired. TO-25...
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