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CEH2609

CET
Part Number CEH2609
Manufacturer CET
Description Dual Enhancement Mode Field Effect Transistor
Published Oct 8, 2015
Detailed Description CEH2609 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 20V, 3.5A, RDS(ON) = 60mΩ @VGS = 4.5V...
Datasheet PDF File CEH2609 PDF File

CEH2609
CEH2609

Overview
CEH2609 Dual Enhancement Mode Field Effect Transistor (N and P Channel) FEATURES 20V, 3.
5A, RDS(ON) = 60mΩ @VGS = 4.
5V.
RDS(ON) = 80mΩ @VGS = 2.
5V.
-20V, -2.
5A, RDS(ON) = 100mΩ @VGS = -4.
5V.
RDS(ON) = 145mΩ @VGS = -2.
5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
Surface mount Package.
4 5 6 3 2 1 TSOP-6 G1(1) D1(6) G2(3) S1(5) D2(4) S2(2) ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol N-Channel Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS 20 VGS ±12 ID 3.
5 IDM 14 P-Channel -20 ±12 -2.
5 10 Maximum Power Dissipation PD 1.
14 Operating and Store Temperature Range TJ,Tstg -55 to 150 Units V V A A W C Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 110 Units C/W Details are subject to change without notice .
1 Rev 2.
2013.
Mar http://www.
cetsemi.
com CEH2609 N-Channel Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = 250µA VDS = 20V, VGS = 0V VGS = 12V, VDS = 0V VGS = -12V, VDS = 0V 20 1 100 -100 V µA nA nA Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d VGS(th) RDS(on) VGS = VDS, ID = 250µA 0.
4 1.
2 V VGS = 4.
5V, ID = 3.
5A 40 60 mΩ VGS = 2.
5V, ID = 2.
0A 50 80 mΩ Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Ciss Coss VDS = 10V, VGS = 0V, f = 1.
0 MHz 380 90 pF pF Crss 60 pF Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time td(on) tr td(off) VDD = 10V, ID = 3.
5A, VGS = 4.
5V, RGEN = 6Ω Turn-Off Fall Time tf Total Gate Charge Gate-Source Charge Gate-Drain ...


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