DatasheetsPDF.com

D732

INCHANGE
Part Number D732
Manufacturer INCHANGE
Description 2SD732
Published Oct 10, 2015
Detailed Description INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD732 DESCRIPTION ·Collector-Emitte...
Datasheet PDF File D732 PDF File

D732
D732

Overview
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD732 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V (Min) ·High Current Capability ·Complement to Type 2SB696 APPLICATIONS ·Designed for AF power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6V IC Collector Current-Continuous 8A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range 12 A 80 W 150 ℃ -40~150 ℃ isc Website：www.
iscsemi.
cn INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD732 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 5mA; RBE= ∞ V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 0.
5A VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 5V ICBO Collector Cutoff Current VCB= 80V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE DC Current Gain IC= 1A; VCE= 5V fT Current-Gain—Bandwidth Product IC= 1A; VCE= 5V MIN TYP.
MAX UNIT 120 V 150 V 6V 0.
6 V 1.
5 V 0.
1 mA 0.
1 mA 40 320 15 MHz ‹ hFE Classifications CD E F 40-80 60-120 100-200 160-320 isc Website：www.
iscsemi.
cn ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)