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FSYC9055R

Intersil Corporation
Part Number FSYC9055R
Manufacturer Intersil Corporation
Description Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
Published Mar 23, 2005
Detailed Description FSYC9055D, FSYC9055R July 1999 Features • Total Dose UCT CT ROD PRODU P E T E E T R L U 5 O OBS SUBSTITSTYC905 F E , 5...
Datasheet PDF File FSYC9055R PDF File

FSYC9055R
FSYC9055R

Overview
FSYC9055D, FSYC9055R July 1999 Features • Total Dose UCT CT ROD PRODU P E T E E T R L U 5 O OBS SUBSTITSTYC905 F E , 55D SIBL POS STYC90 F Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs Description The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.
Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments.
The dose rate and neutron tolerance necessary for military applications have not been sacrificed.
The Harris portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings.
Numerous packaging options are also available.
This MOSFET is an enhancement-mode silicon-gate power field-effect...


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