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L2N7002SLT3G

Leshan Radio Company
Part Number L2N7002SLT3G
Manufacturer Leshan Radio Company
Description Small Signal MOSFET
Published Oct 12, 2015
Detailed Description LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–23 • We declare that the material of p...
Datasheet PDF File L2N7002SLT3G PDF File

L2N7002SLT3G
L2N7002SLT3G

Overview
LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET 115 mAmps, 60 Volts N–Channel SOT–23 • We declare that the material of product compliance with RoHS requirements.
MAXIMUM RATINGS Rating Drain–Source Voltage Drain–Gate Voltage (RGS = 1.
0 MΩ) Drain Current – Continuous TC = 25°C (Note 1.
) – Continuous TC = 100°C (Note 1.
) – Pulsed (Note 2.
) Gate–Source Voltage – Continuous – Non–repetitive (tp ≤ 50 µs) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR–5 Board (Note 3.
) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(Note 4.
) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol VDSS VDGR ID ID IDM Value 60 60 ±115 ±75 ±800 Unit Vdc Vdc mAdc VGS VGSM ±20 Vdc ±40 Vpk Symbol PD Max 225 1.
8 Unit mW mW/°C RθJA PD RθJA TJ, Tstg 556 300 2.
4 417 –ā55 to +150 °C/W mW mW/°C °C/W °C 1.
The Power Dissipation of the package may result in a lower continuous drain current.
2.
Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.
0%.
3.
FR–5 = 1.
0 x 0.
75 x 0.
062 in.
4.
Alumina = 0.
4 x 0.
3 x 0.
025 in 99.
5% alumina.
ORDERING INFORMATION Device Marking Shipping L2N7002SLT1G L2N7002SLT3G 703 3000 Tape & Reel 703 10000 Tape & Reel L2N7002SLT1G 3 1 2 SOT– 23 (TO–236AB) 115 mAMPS 60 VOLTS R DS(on) = 7.
5 W N - Channel 3 1 2 MARKING DIAGRAM & PIN ASSIGNMENT Drain 3 703 W 12 Gate Source 703 = Device Code W = Work Week 1/4 LESHAN RADIO COMPANY, LTD.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol OFF CHARACTERISTICS Drain–Source Breakdown Voltage (VGS = 0, ID = 10 µAdc) Zero Gate Voltage Drain Current (VGS = 0, VDS = 60 Vdc) Gate–Body Leakage Current, Forward (VGS = 20 Vdc) Gate–Body Leakage Current, Reverse (VGS = –ā20 Vdc) ON CHARACTERISTICS (Note 2.
) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) On–State Drain Current (VDS ≥ 2.
0 VDS(on), VGS = 10 Vdc) Static Drain–Source On–State Voltage (VGS = 10 Vd...


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