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NP110N04PDG

Renesas
Part Number NP110N04PDG
Manufacturer Renesas
Description N-CHANNEL POWER MOS FET
Published Oct 12, 2015
Detailed Description DATA SHEET MOS FIELD EFFECT TRANSISTOR NP110N04PDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP110N04PDG is N-c...
Datasheet PDF File NP110N04PDG PDF File

NP110N04PDG
NP110N04PDG

Overview
DATA SHEET MOS FIELD EFFECT TRANSISTOR NP110N04PDG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP110N04PDG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION PART NUMBER LEAD PLATING NP110N04PDG-E1-AZ Note Pure Sn (Tin) NP110N04PDG-E2-AZ Note Note See “TAPE INFORMATION” PACKING Tape 800 p/reel PACKAGE TO-263 (MP-25ZP) typ.
1.
5 g FEATURES • Channel temperature 175 degree rating • Super low on-state resistance RDS(on)1 = 1.
8 mΩ MAX.
(VGS = 10 V, ID = 55 A) RDS(on)2 = 3.
2 mΩ MAX.
(VGS = 4.
5 V, ID = 55 A) (TO-263) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 40 Gate to Source Voltage (VDS = 0 V) VGSS ±20 Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 ID(DC) ID(pulse) ±110 ±440 Total Power Dissipation (TA = 25°C) PT1 1.
8 Total Power Dissipation (TC = 25°C) PT2 288 Channel Temperature Tch 175 Storage Temperature Tstg −55 to +175 Repetitive Avalan...


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