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NP109N04PUG

Renesas
Part Number NP109N04PUG
Manufacturer Renesas
Description N-Channel Power MOSFET
Published Oct 13, 2015
Detailed Description DATA SHEET MOS FIELD EFFECT TRANSISTOR NP109N04PUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP109N04PUG is N-c...
Datasheet PDF File NP109N04PUG PDF File

NP109N04PUG
NP109N04PUG

Overview
DATA SHEET MOS FIELD EFFECT TRANSISTOR NP109N04PUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP109N04PUG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION PART NUMBER LEAD PLATING PACKING NP109N04PUG-E1-AY Note NP109N04PUG-E2-AY Note Pure Sn (Tin) Tape 800 p/reel Note Pb-free (This product does not contain Pb in external electrode).
PACKAGE TO-263 (MP-25ZP) typ.
1.
5 g FEATURES • Super low on-state resistance RDS(on) = 2.
3 mΩ MAX.
(VGS = 10 V, ID = 55 A) • High current rating ID(DC) = ±110 A (TO-263) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 40 Gate to Source Voltage (VDS = 0 V) VGSS ±20 Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 ID(DC) ID(pulse) ±110 ±440 Total Power Dissipation (TC = 25°C) PT1 220 Total Power Dissipation (TA = 25°C) PT2 1.
8 Channel Temperature Tch 175 Storage Temperature Tstg −55 to +175 Repetitive Avalanche Current...


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