DatasheetsPDF.com

NP110N03PUG

Renesas
Part Number NP110N03PUG
Manufacturer Renesas
Description N-CHANNEL POWER MOS FET
Published Oct 16, 2015
Detailed Description DATA SHEET MOS FIELD EFFECT TRANSISTOR NP110N03PUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP110N03PUG is N-c...
Datasheet PDF File NP110N03PUG PDF File

NP110N03PUG
NP110N03PUG

Overview
DATA SHEET MOS FIELD EFFECT TRANSISTOR NP110N03PUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP110N03PUG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION PART NUMBER PACKAGE NP110N03PUG TO-263 (MP-25ZP) FEATURES • Channel temperature 175 degree rating • Super low on-state resistance RDS(on) = 1.
5 mΩ MAX.
(VGS = 10 V, ID = 55 A) • Low Ciss: Ciss = 16400 pF TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 30 Gate to Source Voltage (VDS = 0 V) VGSS ±20 Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 ID(DC) ID(pulse) ±110 ±440 Total Power Dissipation (TA = 25°C) PT1 1.
8 Total Power Dissipation (TC = 25°C) PT2 288 Channel Temperature Tch 175 Storage Temperature Tstg −55 to +175 Repetitive Avalanche Current Note2 IAR 62 Repetitive Avalanche Energy Note2 EAR 384 Notes 1.
PW ≤ 10 µs, Duty Cycle ≤ 1% 2.
Tch ≤ 150°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V V V A A W W °C °C A mJ (TO-263) THERMAL RESISTANCE Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth(ch-C) Rth(ch-A) 0.
52 83.
3 °C/W °C/W The information in this document is subject to change without notice.
Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country.
Please check with an NEC Electronics sales representative for availability and additional information.
Document No.
D16851EJ1V0DS00 (1st edition) Date Published September 2004 NS CP(K) Printed in Japan 2004 NP110N03PUG ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V Gate Leakage Current Gate to Source Threshold Voltage Note Forward Transfer Admittance Note Drain to Source On-state Resistance Note IGSS VGS(th) | yfs | RDS(on) VGS = ±20 V, VDS = 0 V VDS = VGS, ID = 250 µA VDS = 10 V, ID = 55 A VGS = 10 V, ID = 55 ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)