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IRF2804PbF

Part Number	IRF2804PbF
Manufacturer	International Rectifier
Description	HEXFET Power MOSFET
Published	Oct 16, 2015
Detailed Description	Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repeti...
Datasheet	IRF2804PbF PDF File

Overview

Features l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications.
PD - 95332B IRF2804PbF IRF2804SPbF IRF2804LPbF HEXFET® Power MOSFET D VDSS = 40V G RDS(on) = 2.
0mΩ S ID = 75A TO-220AB IRF2804PbF D2Pak TO-262 IRF2804SPbF IRF2804LPbF Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (See Fig.
9) Continuous Drain Current, VGS @ 10V (Pac...

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IRF2804PbF HEXFET Power MOSFET - International Rectifier

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