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RJL5012DPP

Renesas
Part Number RJL5012DPP
Manufacturer Renesas
Description Silicon N Channel MOS FET
Published Oct 16, 2015
Detailed Description RJL5012DPP Silicon N Channel MOS FET High Speed Power Switching Features • Built-in fast recovery diode • Low on-resist...
Datasheet PDF File RJL5012DPP PDF File

RJL5012DPP
RJL5012DPP

Overview
RJL5012DPP Silicon N Channel MOS FET High Speed Power Switching Features • Built-in fast recovery diode • Low on-resistance • Low leakage current • High speed switching Outline RENESAS Package code: PRSS0003AB-A (Package name: TO-220FN) 1 23 G Absolute Maximum Ratings Item Symbol Drain to source voltage VDSS Gate to source voltage Drain current Drain peak current VGSS IDNote4 ID Note1 (pulse) Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation IDR IDR Note1 (pulse) IAPNote3 EARNote3 Pch Note2 Channel to case thermal impedance θch-c Channel temperature Tch Storage temperature Tstg Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at Tc = 25°C 3.
STch = 25°C, Tch ≤ 150°C 4.
Limited by maximum safe operation area REJ03G1746-0200 Rev.
2.
00 Mar 05, 2009 D 1.
Gate 2.
Drain 3.
Source S Ratings 500 ±30 12 36 12 36 3 0.
5 30 4.
17 150 –55 to +150 (Ta = 25°C) Unit V V A A A A A mJ W ...


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