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LP4101LT1G

LRC
Part Number LP4101LT1G
Manufacturer LRC
Description 20V P-Channel MOSFET
Published Oct 17, 2015
Detailed Description LESHAN RADIO COMPANY, LTD. 20V P-Channel Enhancement-Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A = 100 mΩ RDS(...
Datasheet PDF File LP4101LT1G PDF File

LP4101LT1G
LP4101LT1G

Overview
LESHAN RADIO COMPANY, LTD.
20V P-Channel Enhancement-Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.
5V, Ids@-2.
8A = 100 mΩ RDS(ON), Vgs@-2.
5V, Ids@-2.
0A = 150 mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM we declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device Ordering Information Device Marking LP4101LT1G S-LP4101LT1G P41 LP4101LT3G S...


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