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FQA11N90_F109

N-Channel QFET MOSFET

Description

FQA11N90_F109 — N-Channel QFET® MOSFET FQA11N90_F109 N-Channel QFET® MOSFET 900 V, 11.4 A, 960 mΩ Features 11.4 A, 900 V, RDS(on) = 960 mΩ (Max.) @ VGS = 10 V, ID = 5.7 A Low Gate Charge (Typ. 72 nC) Low Crss (Typ. 30 pF) 100% Avalanche Tested RoHS compliant June 2014 Description This N-Channel enhancement mode power MOSFET is produced using Fair...

Fairchild Semiconductor

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