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H5N2522FP-E0-E

Renesas Technology
Part Number H5N2522FP-E0-E
Manufacturer Renesas Technology
Description High Speed Power Switching MOS FET
Published Oct 18, 2015
Detailed Description H5N2522FP-E0-E 250V - 12A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 0.13  typ. (at ID...
Datasheet PDF File H5N2522FP-E0-E PDF File

H5N2522FP-E0-E
H5N2522FP-E0-E

Overview
H5N2522FP-E0-E 250V - 12A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 0.
13  typ.
(at ID = 6 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching  Built-in fast recovery diode Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP) 1 23 Absolute Maximum Ratings Item Drain to Source voltage Gate to source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.
PW  10 s, duty cycle  1% 2.
Value at Tc = 25C 3.
STch = 25C, T...


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