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TC58NVG1S3HBAI4

Toshiba

2 GBIT (256M x 8 BIT) CMOS NAND E2PROM


Description
TC58NVG1S3HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M  8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58NVG1S3HBAI4 is a single 3.3V 2 Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  2048blocks. The device has two 2176-byte static re...



Toshiba

TC58NVG1S3HBAI4

PDF File TC58NVG1S3HBAI4 PDF File


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