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SVF2N65F

SL
Part Number SVF2N65F
Manufacturer SL
Description 650V N-CHANNEL MOSFET
Published Oct 21, 2015
Detailed Description SVF2N65F_Datasheet 2A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF2N65F is an N-channel enhancement mode power MOS fie...
Datasheet PDF File SVF2N65F PDF File

SVF2N65F
SVF2N65F

Overview
SVF2N65F_Datasheet 2A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF2N65F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.
The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers.
FEATURES ∗ 1A,650V, RDS(on)（typ）=4.
1Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No.
SVF2N65F Package TO-220F-3L Marking SVF2N65F Material Pb free Packing Tube HANGZHOU SILAN MICROELECTRONICS CO.
,LTD Http://www.
silan.
com.
cn REV:1.
0 2011.
03.
08 Page 1 of 7 SVF2N65F_Datasheet ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current Drain Current Pulsed TC=25°C TC=100°C Power Dissipation(TC=25°C) -Derate above 25°C Single Pulsed Avalanche Energy (Note 1) Operation Junction Temperature Range Storage Temperature Range Symbol VDS VGS ID IDM PD EAS TJ Tstg Rating 650 ±30 2.
0 1.
3 8.
0 25 0.
20 100 -55～+150 -55～+150 Unit V V A A W W/°C mJ °C °C THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Symbol RθJC RθJA Rating 5.
0 120 Unit °C/W °C/W ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted) Characteristics Drain -Source Breakdown Voltage Drain-Source Leakage Current Gate-Source Leakage Current Gate Threshold Voltage Static Drain- Source On State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Symbol BVDSS IDSS I...


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