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STR2N2VH5

STMicroelectronics
Part Number STR2N2VH5
Manufacturer STMicroelectronics
Description N-channel Power MOSFET
Published Oct 27, 2015
Detailed Description STR2N2VH5 N-channel 20 V, 0.025 Ω typ., 2.3 A STripFET™ H5 Power MOSFET in a SOT-23 package Datasheet — production data...
Datasheet PDF File STR2N2VH5 PDF File

STR2N2VH5
STR2N2VH5

Overview
STR2N2VH5 N-channel 20 V, 0.
025 Ω typ.
, 2.
3 A STripFET™ H5 Power MOSFET in a SOT-23 package Datasheet — production data Features 3 1 SOT-23 2 Order code VDS RDS(on) max ID PTOT STR2N2VH5 20 V 0.
03 Ω (VGS=4.
5 V) 2.
3 A 0.
35 W • Low on-resistance RDS(on) • High avalanche ruggedness • Low gate drive power loss Applications • Switching applications Figure 1.
Internal schematic diagram Description This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™ H5 technology.
The device has been optimized to achieve very low on-state resistance, contributing to a FoM that is among the best in its class.
Order code STR2N2VH5 Table 1.
Device summary Marking Packages STD1 SOT-23 Packaging Tape and reel July 2014 This is information on a product in full production.
DocID023799 Rev 4 1/13 www.
st.
com Contents Contents STR2N2VH5 1 Electrical ratings .
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3 2 Electrical characteristics .
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4 2.
1 Electrical characteristics (curves) .
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6 3 Test circuits .
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8 4 Package mechanical data .
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9 5 Revision history .
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12 2/13 DocID023799 Rev 4 STR2N2VH5 1 Electrical ratings Electrical ratings Table 2.
Absolute maximum ratings Symbol Parameter VDS Drain-source voltage VGS ID(1) ID (1) IDM(1)(2) PTOT(1) Gate-source voltage Drain current (continuous) at Tpcb = 25 °C Drain current (continuous) at Tpcb = 100 °C Drain current (pulsed) Total dissipation at Tpcb = 25 °C Tstg Storage temperature Tj Max.
operating junction temperature 1.
This value is rated according to Rthj-pcb 2.
Pulse width is li...


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