IGBT
Description
IXGR 50N90B2D1
HiPerFASTTM IGBT with Fast Diode
IXGR 50N90B2D1
B2-Class High Speed IGBT with Fast Diode
(Electrically Isolated Back Surface)
VCES IC25 VCE(sat) tfi typ
= 900 V = 40 A = 2.9 V = 200 ns
Symbol
Test Conditions
VCES V
CGR
VGES VGEM
IC25 IC110 I
F110
I CM
SSOA (RBSOA)
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ
Continuous
Transient...
Similar Datasheet
- IXGR50N90B2D1 IGBT - IXYS
