IGBT
Description
Advance Technical Information
HiPerFASTTM IGBT with Fast Diode
B2-Class High Speed IGBTs with Ultrafast Diode
IXGH 32N90B2D1 IXGT 32N90B2D1
V I CES VC25 t CE(sat)
fi typ
= 900 V = 64 A = 2.7 V = 150 ns
Symbol
Test Conditions
VCES VCGR
VGES VGEM
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient
IC25 IC110 ICM
SSOA (RBSOA)
TC = 2...
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