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IXTH13N80

IXYS
Part Number IXTH13N80
Manufacturer IXYS
Description MegaMOS FET
Published Nov 1, 2015
Detailed Description MegaMOSTMFET N-Channel Enhancement Mode VDSS IXTH / IXTM 11N80 800 V IXTH / IXTM 13N80 800 V ID25 11 A 13 A RDS(on) 0...
Datasheet PDF File IXTH13N80 PDF File

IXTH13N80
IXTH13N80

Overview
MegaMOSTMFET N-Channel Enhancement Mode VDSS IXTH / IXTM 11N80 800 V IXTH / IXTM 13N80 800 V ID25 11 A 13 A RDS(on) 0.
95 Ω 0.
80 Ω Symbol Test Conditions Maximum Ratings VDSS VDGR VGS VGSM I D25 IDM TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient T C = 25°C TC = 25°C, pulse width limited by TJM 11N80 13N80 11N80 13N80 800 V 800 V ±20 V ±30 V 11 A 13 A 44 A 52 A PD TJ TJM Tstg Md Weight TC = 25°C Mounting torque 300 W -55 .
.
.
+150 150 -55 .
.
.
+150 °C °C °C 1.
13/10 Nm/lb.
in.
TO-204 = 18 g, TO-247 = 6 g Maximum lead temperature for soldering 1.
6 mm (0.
062 in.
) from case for 10 s 300 °C TO-247 AD (IXTH) D (TAB) TO-204 AA (IXTM) G = Gate, S = Source, ...


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