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QS6J11

Rohm
Part Number QS6J11
Manufacturer Rohm
Description Dual Pch -12V -2.0A Power MOSFET
Published Nov 1, 2015
Detailed Description QS6J11 Dual Pch -12V -2.0A Power MOSFET VDSS RDS(on) (Max.) ID PD -12V 105mW -2A 1.25W lFeatures 1) Low on - resistan...
Datasheet PDF File QS6J11 PDF File

QS6J11
QS6J11

Overview
QS6J11 Dual Pch -12V -2.
0A Power MOSFET VDSS RDS(on) (Max.
) ID PD -12V 105mW -2A 1.
25W lFeatures 1) Low on - resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (TSMT6).
4) Pb-free lead plating ; RoHS compliant lOutline TSMT6 (6) (5) (4) (1) (2) (3) lInner circuit (1) Tr1 Gate (2) Tr2 Source (3) Tr2 Gate (4) Tr2 Drain (5) Tr1 Source (6) Tr1 Drain *1 ESD PROTECTION DIODE *2 BODY DIODE Datasheet lPackaging specifications Packaging lApplication DC/DC converters Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Taping code Marking lAbsolute maximum ratings(Ta = 25°C) Parameter Symbol Value Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Power dissipation Junction temperature Range of storage temperature VDSS ID *1 ID,pulse *2 VGSS PD *3 PD *4 Tj Tstg -12 2 8 10 1.
25 0.
6 150 -55 to +150 Taping 180 8 3,000 TR J11 Unit V A A V W W °C °C www.
rohm.
com © 2012 ROHM Co.
, Ltd.
All rights reserved.
1/11 2012.
06 - Rev.
B QS6J11 Data Sheet lThermal resistance Parameter Symbol Thermal resistance, junction - ambient Thermal resistance, junction - ambient lElectrical characteristics (Ta = 25°C) RthJA *3 RthJA *4 Parameter Symbol Conditions Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = -1mA Values Min.
Typ.
Max.
Unit - - 100 °C/W - - 208 °C/W Values Min.
Typ.
Max.
Unit -12 - - V Breakdown voltage temperature coefficient ΔV(BR)DSS ID = -1mA ΔTj referenced to 25°C - -17 - mV/°C Zero gate voltage drain current IDSS VDS = -12V, VGS = 0V - - -1 mA Gate - Source leakage current IGSS VGS = 10V, VDS = 0V - - 10 mA Gate threshold voltage VGS (th) VDS = -6V, ID = -1mA -0.
3 - -1.
0 V Gate threshold voltage temperature coefficient ΔV(GS)th ID = -1mA ΔTj referenced to 25C - 2.
4 - mV/°C Static drain - source on - state resistance Gate input resis...


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