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UM6K1N

Rohm
Part Number UM6K1N
Manufacturer Rohm
Description 2.5V Drive Nch+Nch MOSFET
Published Nov 4, 2015
Detailed Description Transistors 2.5V Drive Nch+Nch MOS FET UM6K1N UM6K1N zStructure Silicon N-channel MOS FET zFeatures 1) Two 2SK3018 tra...
Datasheet PDF File UM6K1N PDF File

UM6K1N
UM6K1N


Overview
Transistors 2.
5V Drive Nch+Nch MOS FET UM6K1N UM6K1N zStructure Silicon N-channel MOS FET zFeatures 1) Two 2SK3018 transistors in a single UMT package.
2) The MOS FET elements are independent, eliminating mutual interference.
3) Mounting cost and area can be cut in half.
4) Low On-resistance.
5) Low voltage drive (2.
5V drive) makes this device ideal for portable equipment.
zExternal dimensions (Unit : mm) UMT6 2.
0 1.
3 0.
65 0.
65 (5) (6) (4) 0.
9 0.
7 1.
25 2.
1 0.
1Min.
1pin mark (1) (3) (2) 0.
2 0.
15 Each lead has same dimensions Abbreviated symbol : K1 zApplications Interfacing, switching (30V, 100mA) zPackaging specifications Type UM6K1N Package Code Basic ordering unit (pieces) Taping TN 3000 zAbsolute maximum ratings (Ta=25°C) > Parameter Symbol Drain-source voltage VDSS Gate-source voltage VGSS Drain current Total power dissipation Continuous Pulsed ID IDP ∗1 PD ∗2 Channel temperature Tch Range of storage temperature Tstg ∗1 Pw≤10µs, Duty cycle≤1% ∗2 With each pin mounted on the recommended lands.
zInner circuit Limits 30 ±20 ±100 ±400 150 150 −55 to +150 Unit V V mA mA mW °C °C (6) Tr1 Gate (5) Protection (4) Diode ∗ Tr2 ∗ Gate (1) Protection Diode (2) (3) (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Drain (4) Tr2 Source (5) Tr2 Gate (6) Tr1 Drain ∗ A protection diode has been built in between the gate and the source to protect against static electricity when the product is in use.
Use the protection circuit when rated voltages are exceeded.
zThermal resistance Parameter Channel to ambient Symbol Rth(ch-a) ∗ ∗ With each pin mounted on the recommended lands.
Limits 833 1042 Unit °C / W / TOTAL °C / W / ELEMENT Rev.
B 1/3 Transistors zElectrical characteristics (Ta=25°C) > Parameter Symbol Gate-source leakage IGSS Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static...



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