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QS5U33

Rohm
Part Number QS5U33
Manufacturer Rohm
Description 4V Drive Pch+SBD MOSFET
Published Nov 5, 2015
Detailed Description QS5U33 　　4V Drive Pch+SBD MOSFET 　　 Datasheet VDSS RDS(on)(Max.) ID PD -30V 135mΩ ±2.0A 1.25W lOutline TSMT5 　 　 　　　...
Datasheet PDF File QS5U33 PDF File

QS5U33
QS5U33

Overview
QS5U33 　　4V Drive Pch+SBD MOSFET 　　 Datasheet VDSS RDS(on)(Max.
) ID PD -30V 135mΩ ±2.
0A 1.
25W lOutline TSMT5 　 　 　　　　　　 　　　　　　 　 　 　 　　　　　　 lFeatures 1) The QS5U33 combines Pch MOSFET with a 　　Schottky barrier diode in a single TSMT5 　　package.
2) Low on-state resistance with fast swicthing 3) Low voltage drive (4V drive).
4) Built-in Low VF schottky barrier diode.
5) Pb-free lead plating ; RoHS compliant.
lInner circuit lPackaging specifications Packing Embossed Tape Reel size (mm) 180 lApplication Load switch, DC/ DC conversion Type Tape width (mm) Basic ordering unit (pcs) 8 3000 Taping code TR lAbsolute maximum ratings (Ta = 25°C) Marking U33 Parameter Symbol Value Unit Drain - Source voltage VDSS -30 V Gate - Source voltage VGSS ±20 V Continuous drain current ID ±2.
0 A Pulsed drain current ID, *1 pulse ±8.
0 A Continuous source current (body diode) IS -0.
75 A Pulsed source current (body diode) IS, *1 pulse -8.
0 A Power dissipation PD*3 0.
9 W/element Junction temperature Tj 150 ℃ 　 　 　　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.
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com © 2015 ROHM Co.
, Ltd.
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1/10 20150730 - Rev.
001 　 　 QS5U33 　 　 　 　　 　 lAbsolute maximum ratings (Ta = 25°C) Parameter Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Power dissipation Junction temperature 　 　 　 　 　 　 　 　 Datasheet Symbol VRM VR IF IFSM*2 PD*3 Tj Value 25 20 1.
0 3.
0 0.
7 150 Unit V V A A W/element ℃ Parameter Power dissipation Range of storage temperature Symbol PD*3 Tstg Value 1.
25 -55 to +150 Unit W/total ℃ lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Gate - Source leakage current IGSS VGS = ±20V, VDS = 0V Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = -1mA Zero gate voltage drain current Gate threshold voltage Static drain - source on - state resistance Forward T...


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